Remarkable and Crystal-Structure-Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

被引：68
作者：
Li, Xing [1 ,2 ]
Wei, Xianlong [1 ,2 ]
Xu, Tingting [1 ,2 ]
Pan, Dong [3 ]
Zhao, Jianhua [3 ]
Chen, Qing [1 ,2 ]
机构：
[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 18期
基金：
高等学校博士学科点专项科研基金;
关键词：
SILICON NANOWIRES; GIANT PIEZORESISTANCE; SOLAR-CELLS; STRAIN; PHOTODETECTORS; PERFORMANCE; DIAMETER; ARRAY;
D O I：
10.1002/adma.201500037
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The piezoelectric and piezoresistive effects of InAs nanowires are experimentally demonstrated for the first time and are observed to strongly depend on the NW crystal structure. While single-crystalline < 0001 > oriented wurtzite nanowires exhibit remarkable piezoelectric and piezoresistive effects, they are negligible in single-crystalline wurtzite < 11 (2) over bar0 >, zinc blende < 011 >, < 103 >, <(2) over bar(1) over bar1 > oriented nanowires, and significantly suppressed by the presence of stacking faults.
引用
收藏
页码：2852 / +
页数：8
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