High-efficiency AlGaAs/GaAs quantum well semiconductor laser - art. no. 68241G

被引：0

作者：

Lin Li ^{[1
]}

Chunming Wan ^{[1
]}

Zhanguo Li ^{[1
]}

Mei Li ^{[1
]}

Guojun Liu ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

来源：

SEMICONDUCTOR LASERS AND APPLICATIONS III | 2008年 / 6824卷

关键词：

power conversion efficiency; quantum well; semiconductor laser;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The AlGaAs/GaAs double quantum, well semiconductor lasers grown by molecular beam epitaxy show high external quantum efficiency and high power conversion efficiency at continuous-wave power output using an asymmetric structure. The threshold current density and slope efficiency of the device are 200A/cm(2) and 1.25W/A, respectively.. The high external quantum efficiency and maximum conversion efficiency are 81% and 66%, respectively.

引用

页码：G8241 / G8241

页数：5

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