Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

被引：2

作者：

Liu, Xue-Chao ^{[1
]}

Myronov, M. ^{[1
]}

Dobbie, A. ^{[1
]}

Nguyen, Van H. ^{[1
]}

Leadley, D. R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Nanosilicon Grp, Coventry CV4 7AL, W Midlands, England

来源：

SOLID-STATE ELECTRONICS | 2011年 / 60卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

High-resolution X-ray diffraction; X-ray reflectivity; Thickness; Si based heterostructure; THIN-FILMS; SCATTERING;

D O I：

10.1016/j.sse.2011.01.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution X-ray diffraction rocking curve (RC) and X-ray reflectivity (XRR) were used to characterize the Si based heterostructures grown by reduced pressure chemical vapour deposition. The investigation focused on the reliability and accuracy of thickness measurement by the different techniques. For smooth Si epilayers grown on a thin (20 nm) strained Si(0.9)Ge(0.1) buffer, it is found that both XRR and RC produce reliable values that agree well with transmission electron microscope (TEM) results over a wide range. The best-fit thickness from both XRR and RC is within +/- 5% of the TEM measurement, with XRR producing more accurate values than RC. However, the agreement is not good for Si epilayer grown on a thick (2 mu m) relaxed Si(07)Ge(0.3) virtual substrate due to the presence of rough surface. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：42 / 45

页数：4

共 16 条

[1] Recent advances in characterization of ultra-thin films using specular X-ray reflectivity technique [J].

Banerjee, S ;

Ferrari, S ;

Chateigner, D ;

Gibaud, A .

THIN SOLID FILMS, 2004, 450 (01) :23-28

[2] Study of thin film multilayers using X-ray reflectivity and scanning probe microscopy [J].

Banerjee, S ;

Datta, A ;

Sanyal, MK .

VACUUM, 2001, 60 (04) :371-376

[3] Thin film and surface characterization by specular X-ray reflectivity [J].

Chason, E ;

Mayer, TM .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1997, 22 (01) :1-67

[4]

FEWSTER PF, 2003, XRAY SCATTING SEMICO

[5] Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5) [J].

Hartmann, J. M. ;

Abbadie, A. ;

Rouchon, D. ;

Barnes, J. P. ;

Mermoux, M. ;

Billon, T. .

THIN SOLID FILMS, 2008, 516 (12) :4238-4246

[6] X-ray reflectivity characterization of ZnO/Al2O3 multilayers prepared by atomic layer deposition [J].

Jensen, JM ;

Oelkers, AB ;

Toivola, R ;

Johnson, DC ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2002, 14 (05) :2276-2282

[7] Characterization of nanostructure in Si1-xGex epilayers using x-ray reflectivity and fluorescence techniques -: art. no. 074309 [J].

Kim, S ;

Kioseoglou, G ;

Huang, S ;

Kao, YH ;

Soo, YL ;

Zhu, X ;

Wang, KL .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)

[8]

Komiya S., 1997, Journal of the Crystallographic Society of Japan, V39, P89, DOI 10.5940/jcrsj.39.89

[9]

PANALYTICAL BV, 2007, XPERT EPITAXY VS 4 2

[10] SURFACE STUDIES OF SOLIDS BY TOTAL REFLECTION OF X-RAYS [J].

PARRATT, LG .

PHYSICAL REVIEW, 1954, 95 (02) :359-369

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