P-type enhancement-mode SiGe doped-channel field-effect transistor

被引：2

作者：

Lin, YM

Wu, SL

Chang, SJ

Koh, S

Shiraki, Y

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan, Taiwan

[2] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan

[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 12A期

关键词：

doped channel; SiGe; carrier confinement;

D O I：

10.1143/JJAP.42.L1422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the delta-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the delta-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.

引用

页码：L1422 / L1424

页数：3