InAlN/GaN HEMTs With AlGaN Back Barriers

被引：151

作者：

Lee, Dong Seup ^{[1
]}

Gao, Xiang ^{[2
]}

Guo, Shiping ^{[2
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

[2] IQE RF LLC, Somerset, NJ 08873 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

基金：

美国国家科学基金会;

关键词：

AlGaN back barrier; current gain cutoff frequency (f(T)); drain-induced barrier lowering (DIBL); GaN; high-electron-mobility transistor (HEMT); InAlN; output resistance; CURRENT-DENSITY; TRANSCONDUCTANCE;

D O I：

10.1109/LED.2011.2111352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter studies the effect of AlGaN back barriers in the dc and RF performance of In0.17Al0.83N/GaN high-electron mobility transistors grown on SiC substrates. When compared to conventional structures without a back barrier, the back barrier effectively prevents the degradation of drain-induced barrier lowering and significantly improves the output resistance in sub-100-nm-gate-length devices. The reduction in short-channel effects helps to increase the frequency performance of AlGaN back-barrier devices. For a 65-nm gate length, the current gain cutoff frequency (f(T)) of a transistor with an AlGaN back barrier is 210 GHz, which is higher than that of the standard device with the same gate length (f(T) = 195 GHz).

引用

页码：617 / 619

页数：3

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