Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

被引：11
|
作者：
Zhao, Ziwen [1 ,2 ]
Hu, Lizhong [1 ,2 ]
Zhang, Heqiu [1 ,2 ]
Sun, Jingchang [1 ,2 ]
Bian, Jiming [1 ,2 ]
Zhao, Jianze [1 ,2 ]
机构：
[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 11期
关键词：
Sb-doped ZnO; Pulsed laser deposition; Hall-effect-measurement; X-ray diffraction; Scan electronic microscopy; Photoluminescence spectra; P-TYPE ZNO;
D O I：
10.1016/j.apsusc.2011.01.037
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 degrees C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 degrees C showed strong acceptor-bound exciton (A(0)X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：5121 / 5124
页数：4
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