Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

被引：11

作者：

Zhao, Ziwen ^{[1
,2
]}

Hu, Lizhong ^{[1
,2
]}

Zhang, Heqiu ^{[1
,2
]}

Sun, Jingchang ^{[1
,2
]}

Bian, Jiming ^{[1
,2
]}

Zhao, Jianze ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 11期

关键词：

Sb-doped ZnO; Pulsed laser deposition; Hall-effect-measurement; X-ray diffraction; Scan electronic microscopy; Photoluminescence spectra; P-TYPE ZNO;

D O I：

10.1016/j.apsusc.2011.01.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 degrees C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 degrees C showed strong acceptor-bound exciton (A(0)X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5121 / 5124

页数：4

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