Heavily silicon-doped GaN by MOVPE

被引：40

作者：

Halidou, I ^{[1
]}

Benzarti, Z ^{[1
]}

Chine, Z ^{[1
]}

Boufaden, T ^{[1
]}

El Jani, B ^{[1
]}

机构：

[1] Fac Sci, Phys Mat Lab, Tunis 5000, Tunisia

来源：

MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 02期

关键词：

silicon-doped GaN; MOVPE; amphoteric behavior;

D O I：

10.1016/S0026-2692(00)00118-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavily Si-doped GaN epitaxial layers have been grown at 1050 degreesC on AlN-buffered (0001) sapphire substrates by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylaluminuim and ammoniac sources. H-2 was the carrier gas. The silicon doping characteristics of GaN epilayers have been investigated by varying the silane (SiH4) flow. In order to calibrate the thickness of the buffer layer and the surface flatness of GaN, the growth was monitored in situ by laser reflectometry. Electron concentration between 5 x 10(18) and 2.2 x 10(20) cm(-3) was obtained with mobility ranging from 200 to 9 cm(2)/V s. A saturation tendency of electron concentration appears. The comparison between the Hall effect measurements and theoretical calculations of mobility based on a simple model leads to the determination of the compensation ratio of the samples which depends strongly on the SiH4 partial pressure. We attribute the origin of this compensation to the amphoteric behavior of silicon. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：137 / 142

页数：6

共 25 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].