An artificial fingerprint device (AFD): A study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs

被引：13
作者：
Maeda, S [1 ]
Kuriyama, H
Ipposhi, T
Maegawa, S
Inoue, Y
Inuishi, M
Kotani, N
Nishimura, T
机构：
[1] Mitsubishi Electr Corp, Itami, Hyogo 6648641, Japan
[2] Hiroshima Int Univ, Fac Infrastructural Technol, Dept Informat Technol, Hiroshima 7370112, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 06期
关键词：
crystals; identification; random number generation; silicon; silicon on insulator technology; thin-film transistors;
D O I：
10.1109/TED.2002.808526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An idea for obtaining unique identification (ID) numbers using polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a logic LSI compatible process is proposed. Like an actual human fingerprint, the characteristic variations of poly-Si TFTs are utilized for ID numbers in LSIs. The variation of poly-Si TFT characteristics is random, and this method offers unique, nonalterable, and nonduplicable numbers without any special processes, unlike other methods such as flash memory and mask ROM. These characteristics are highly suitable for ID number applications. The device physics of poly-Si TFTs for realizing the stable recognition of ID numbers was studied and a recognition circuit is proposed. The design guidelines for the grain size of poly-Si and AFD applications are also discussed.
引用
收藏
页码：1451 / 1458
页数：8
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