Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions

被引：99

作者：

Liu, Hong-xi ^{[1
]}

Kawami, Takeshi ^{[1
]}

Moges, Kidist ^{[1
]}

Uemura, Tetsuya ^{[1
]}

Yamamoto, Masafumi ^{[1
]}

Shi, Fengyuan ^{[2
]}

Voyles, Paul M. ^{[2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 16期

基金：

美国能源部;

关键词：

Heusler alloy thin films; half-metallic character; magnetic tunnel junctions; tunneling magnetoresistance; Co-2(Mn; Fe)Si; Co2MnSi; PHOTOELECTRON-SPECTROSCOPY; ROOM-TEMPERATURE; SPIN INJECTION; COBALT;

D O I：

10.1088/0022-3727/48/16/164001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of off-stoichiometry on the half-metallic character of quaternary Heusler alloy thin films of Co-2(Mn,Fe)Si (CMFS) was investigated by studying the composition dependence of the tunnelling magnetoresistance (TMR) ratio of fully epitaxial CMFS/MgO/CMFS magnetic tunnel junctions (CMFS MTJs) having Co-2(Mn alpha'Fe beta')Si-0.84 electrodes with various Mn and Fe compositions. It was found that MJTs with (Mn + Fe)-rich electrodes had higher TMR ratios than ones with (Mn + Fe)-deficient electrodes at 4.2 and 290 K. These results indicate that the suppression of Co antisites at nominal Mn/Fe sites is critical to obtaining half-metallic quaternary Co-2(Mn,Fe)Si in a similar way as in ternary alloy Co2MnSi. CMFS MTJs with Mn-rich and lightly Fe-doped CMFS electrodes showed giant TMR ratios of 2610% at 4.2 K and 429% at 290 K. These results suggest that Co-based Heusler alloy thin films would be highly applicable to spintronic devices because of their half-metallicity and material diversity arising from not only ternary alloy but also quaternary alloy systems.

引用

页数：9

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