Electronic spectrum in a microscopical model for the Zn-doped CuO2 plane

被引:2
作者
Zovacevic, Z [1 ]
Chaplygin, I
Hayn, R
Plakida, NM
机构
[1] Joint Inst Nucl Res, Dubna 141980, Russia
[2] Univ Montenegro, Fac Nat Sci & Math, YU-81001 Podgorica, Yugoslavia
[3] Univ Technol Dresden, Inst Theoret Phys, D-01062 Dresden, Germany
[4] Inst Solid State & Mat Res, D-01171 Dresden, Germany
关键词
D O I
10.1007/s100510070022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We consider a microscopical model for the Zn-doped CuO2 plane with Zn impurities being described as vacancies for the d-states on Cu sites. A reduction of the original p-d model to an effective one-band model results in the t-J model with vacancies for the spin 1/2 d-states at the Zn-sites. By employing the T-matrix formalism for the Green functions in terms of the Hubbard operators the density of electronic states (DOS) is calculated. Symmetry analysis of the perturbation matrix shows that in the system with d-type electronic wa cre functions additional DOS of d-, p- and s-types appear due to the perturbation of local energy levels and the interaction between nearest neighbors around the vacancy. The local and resonant state formation caused by Zn impurities is analyzed.
引用
收藏
页码:377 / 384
页数:8
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