GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

被引：9

作者：

Chen, Lung-Chien ^{[1
]}

Chung, Cheng-Ban ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 20期

关键词：

ZnO nanotexture; spraying pyrolysis method; hydrogen treatment; GaN;

D O I：

10.1016/j.apsusc.2008.04.062

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO films were deposited on indium tin oxide (ITO), which formed the transparent conductive layer (TCL) of a GaN-based light-emitting diode (LED), by ultrasonic spraying pyrolysis to increase the light output power. The ZnO nanotexture was formed by treating the as-deposited ZnO films with hydrogen. The root mean square (RMS) roughness increased from 4.47 to 7.89 nm before hydrogen treatment to 10.82-15.81 nm after hydrogen treatment for 20 min. Typical current-voltage (I-V) characteristics of the GaN-based LEDs with a ZnO nanotexture layer have a forward-bias voltage of 3.25 V at an injection current of 20 mA. The light output power of a GaN-based LED with a ZnO nanotexture layer improved to as much as about 27.5% at a forward current of 20 mA. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：6586 / 6589

页数：4

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