Growth, optical and electrical properties of Ca2Si film grown on Si(111) and Mg2Si/Si(111) substrates

被引：16

作者：

Dotsenko, S. A. ^{[1
]}

Fomin, D. V. ^{[2
]}

Galkin, K. N. ^{[1
]}

Goroshko, D. L. ^{[1
]}

Galkin, N. G. ^{[1
]}

机构：

[1] Inst Automat & Control Proc, Radio Str 5, Vladivostok 690041, Russia

[2] Amur State Univ, Blagoveshchensk, Russia

来源：

ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷

关键词：

silicon; calcium; magnesium silicide; calcium silicide; semiconductor film;

D O I：

10.1016/j.phpro.2011.01.015

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Formation of semiconductor calcium silicide Ca2Si on Si(111)7x7 and 2/3 root 3-Mg surface phases and bulk Mg2Si film was studied. Conditions of high quality Ca2Si film growth were found. Formation of Ca surface phase was demonstrated at the initial stage of Ca2Si film growth on 2/3 root 3-Mg surface phase at narrow temperature range. Band gap of this surface phase and 2/3 root 3-Mg were obtained. (C) 2010 Published by Elsevier B.V.

引用

页码：95 / 98

页数：4

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