Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films

被引：23

作者：

Jeon, YJ ^{[1
]}

Lee, BH ^{[1
]}

Zawadzki, K ^{[1
]}

Qi, WJ ^{[1
]}

Lucas, A ^{[1
]}

Nieh, R ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and reliability characteristics of several metal/high-k/(barrier layer)/Si capacitor structures have been investigated. The equivalent oxide thickness (EOT) increased as the annealing temperature increased, especially in oxygen ambient. Jet vapor-deposited (JVD) nitride was found to be a good oxidation barrier which is important for achieving thin EOT. Introducing TiO2 as a barrier layer reduced the leakage current and EOT of Pt/PST/Si capacitor. The conduction mechanism in Pt/TiO2/Si structure was found to be tunneling-like behavior limited by the interfacial layer. Hysteresis could be minimized by the optimization of the annealing process. In reliability characteristics, TiO2 revealed no significant degradation and exhibited better wear-out properties than conventional SiO2.

引用

页码：797 / 800

页数：4

共 6 条

[1]

BERTLAND PA, 1993, J ELECTROCHEM SOC, V140, P145

[2] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].