Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation

被引：0
作者：
Dinh-Lam Dang [1 ]
Guichard, Sophie [1 ]
Urbain, Matthieu [1 ]
Rael, Stephane [1 ]
机构：
[1] Univ Lorraine, Lab GREEN ENSEM, 2 Ave Foret Haye, F-54518 Vandoeuvre Les Nancy, France
来源：
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE) | 2016年
关键词：
Silicon Carbide (SiC); MOSFET; Device characterisation; Device modeling; POWER MOSFET MODEL; MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range -30 degrees C to 150 degrees C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility, temperature and the threshold voltage on transistor properties have been taken into account. The parameters used to define the device were extracted from measurements using MATLAB and datasheet.
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页数：10
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