Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation

被引：0
|
作者：
Dinh-Lam Dang [1 ]
Guichard, Sophie [1 ]
Urbain, Matthieu [1 ]
Rael, Stephane [1 ]
机构：
[1] Univ Lorraine, Lab GREEN ENSEM, 2 Ave Foret Haye, F-54518 Vandoeuvre Les Nancy, France
来源：
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE) | 2016年
关键词：
Silicon Carbide (SiC); MOSFET; Device characterisation; Device modeling; POWER MOSFET MODEL; MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range -30 degrees C to 150 degrees C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility, temperature and the threshold voltage on transistor properties have been taken into account. The parameters used to define the device were extracted from measurements using MATLAB and datasheet.
引用
收藏
页数：10
相关论文
共 50 条
  • [1] Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range
    Licciardo, Gian Domenico
    Bellone, Salvatore
    Di Benedetto, Luigi
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (10) : 5800 - 5809
  • [2] Characterization and modeling of 4H-SiC power BJTs
    Gao, Y
    Haung, AQ
    Agarwal, AK
    Krishnaswami, S
    IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3, 2005, : 674 - 678
  • [3] Optimized Design of 4H-SiC VDMOSFET for Low ON-resistance
    Yin, Defu
    Wu, Zhiming
    Zou, Xian
    Sun, Yongqiang
    Wu, Yaping
    Wang, Weiping
    Li, Xu
    Kang, Junyong
    2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, : 46 - 49
  • [4] Electrothermal issues in 4H-SiC 600 V Shottky diodes in forward mode: Experimental characterization, numerical Simulations and analytical modeling
    Irace, Andrea
    d'Alessandro, Vincenzo
    Breglio, Giovanni
    Spirito, Paolo
    Bricconi, Andrea
    Carta, Rossano
    Raffo, Diego
    Merlin, Luigi
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1151 - 1154
  • [5] Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
    Beltran, Ana M.
    Schamm-Chardon, Sylvie
    Mortet, Vincent
    Lefebvre, Matthieu
    Bedel-Pereira, Elena
    Cristiano, Fuccio
    Strenger, Christian
    Haeublein, Volker
    Bauer, Anton J.
    HETEROSIC & WASMPE 2011, 2012, 711 : 134 - +
  • [6] Characterization of the forward-conduction of 4H-SiC planar junction diode
    Ohyanagi, T
    Ohno, T
    Amemiya, K
    Watanabe, A
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 835 - 838
  • [7] Modeling and Characterization of the ON-Resistance in 4H-SiC Power BJTs
    Buono, Benedetto
    Ghandi, Reza
    Domeij, Martin
    Malm, Bengt Gunnar
    Zetterling, Carl-Mikael
    Ostling, Mikael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) : 2081 - 2087
  • [8] 4H-SiC和6H-SiC功率VDMOSFET的单粒子烧毁效应
    刘忠永
    蔡理
    刘小强
    刘保军
    崔焕卿
    杨晓阔
    微纳电子技术, 2017, 54 (02) : 80 - 85
  • [9] Cryogenic operation of 4H-SiC Schottky rectifiers
    Shanbhag, M
    Chow, TP
    PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2002, : 129 - 132
  • [10] Analysis of Parallel Operation of 4H-SiC GTOs
    Fang, Fang
    Liang, Shiwei
    Yin, Xin
    Liu, Hangzhi
    Deng, Wenjuan
    Wang, Jun
    Zhou, Kun
    Cao, Xiaopeng
    PROCEEDINGS OF 2019 IEEE 3RD INTERNATIONAL ELECTRICAL AND ENERGY CONFERENCE (CIEEC), 2019, : 596 - 600
12345