Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

被引：10

作者：

Kawata, Hiromu ^{[1
]}

Hasegawa, Sho ^{[1
]}

Matsumura, Junta ^{[1
]}

Nishinaka, Hiroyuki ^{[2
]}

Yoshimoto, Masahiro ^{[2
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

[2] Kyoto Inst Technol, Fac Elect Engn & Elect, Kyoto 6068585, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2021年 / 36卷 / 09期

关键词：

GaNAsBi; GaAsBi; solar cells; molecular beam epitaxy; III-V semiconductors; dilute nitride; thermal annealing; GAAS; EFFICIENCY; GROWTH; GAN;

D O I：

10.1088/1361-6641/ac13af

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular beam epitaxy. The addition of even a small amount of N (less than 1%) to the GaAsBi alloy significantly reduces the short-circuit current density (J (sc)) of the solar cell. However, after thermal annealing, J (sc) increases by similar to 6.5 times. After thermal annealing, the GaN0.006As0.966Bi0.028 solar cells (bandgap (E (g)) = 1.15 eV) exhibited an open-circuit voltage (V (oc)) of 0.35 V, J (sc) of 10.2 mA cm(-2), and fill factor of 0.56. Based on the Urbach energy of Ga(N)AsBi, the decreased crystallinity associated with the addition of N leads to poor characteristics of GaNAsBi solar cells compared with those GaAsBi solar cells.

引用

页数：6