Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

被引:10
|
作者
Kawata, Hiromu [1 ]
Hasegawa, Sho [1 ]
Matsumura, Junta [1 ]
Nishinaka, Hiroyuki [2 ]
Yoshimoto, Masahiro [2 ]
机构
[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan
[2] Kyoto Inst Technol, Fac Elect Engn & Elect, Kyoto 6068585, Japan
关键词
GaNAsBi; GaAsBi; solar cells; molecular beam epitaxy; III-V semiconductors; dilute nitride; thermal annealing; GAAS; EFFICIENCY; GROWTH; GAN;
D O I
10.1088/1361-6641/ac13af
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular beam epitaxy. The addition of even a small amount of N (less than 1%) to the GaAsBi alloy significantly reduces the short-circuit current density (J (sc)) of the solar cell. However, after thermal annealing, J (sc) increases by similar to 6.5 times. After thermal annealing, the GaN0.006As0.966Bi0.028 solar cells (bandgap (E (g)) = 1.15 eV) exhibited an open-circuit voltage (V (oc)) of 0.35 V, J (sc) of 10.2 mA cm(-2), and fill factor of 0.56. Based on the Urbach energy of Ga(N)AsBi, the decreased crystallinity associated with the addition of N leads to poor characteristics of GaNAsBi solar cells compared with those GaAsBi solar cells.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] The Simulation of CZTS Solar Cell for performance improvement
    Kumar, Atul
    Thakur, Ajay D.
    2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017), 2018, 1953
  • [42] Effect of post-synthesis annealing on properties of SnS nanospheres and its solar cell performance
    Truong, Nguyen Tam Nguyen
    Hoang, Ha Hai Thi
    Trinh, Thanh Kieu
    Pham, Viet Thanh Hau
    Smith, Ryan Patrick
    Park, Chinho
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2017, 34 (04) : 1208 - 1213
  • [43] Effect of post-synthesis annealing on properties of SnS nanospheres and its solar cell performance
    Nguyen Tam Nguyen Truong
    Ha Hai Thi Hoang
    Thanh Kieu Trinh
    Viet Thanh Hau Pham
    Ryan Patrick Smith
    Chinho Park
    Korean Journal of Chemical Engineering, 2017, 34 : 1208 - 1213
  • [44] Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication
    Soga, T
    Jimbo, T
    Wang, G
    Ohtsuka, K
    Umeno, M
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) : 2285 - 2288
  • [45] Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell
    Cui Min
    Chen Nuofu
    Yang Xiaoli
    Zhang Han
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (02)
  • [46] Solar cell fabrication with single-junction GaAs quantum wells
    Department of Electronics, Southeast University, Nanjing 210096, China
    不详
    不详
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2006, 26 (SUPPL.): : 50 - 52
  • [47] Gamma radiation effect on the GaAs solar cell performance
    Feteha, MY
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 91 - 96
  • [48] Optimisation of diketopyrrolopyrrole:fullerene solar cell performance through control of polymer molecular weight and thermal annealing
    Huang, Zhenggang
    Fregoso, Elisa Collado
    Dimitrov, Stoichko
    Tuladhar, Pabitra Shakya
    Soon, Ying Woan
    Bronstein, Hugo
    Meager, Iain
    Zhang, Weimin
    McCulloch, Iain
    Durrant, James R.
    JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (45) : 19282 - 19289
  • [49] Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing
    V. Pakštas
    G. Grincienė
    A. Selskis
    S. Balakauskas
    M. Talaikis
    L. Bruc
    N. Curmei
    G. Niaura
    M. Franckevičius
    Scientific Reports, 12
  • [50] Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing
    Pakstas, V
    Grinciene, G.
    Selskis, A.
    Balakauskas, S.
    Talaikis, M.
    Bruc, L.
    Curmei, N.
    Niaura, G.
    Franckevicius, M.
    SCIENTIFIC REPORTS, 2022, 12 (01)