Copper plating for 3D interconnects

被引：70

作者：

Radisic, A. ^{[1
]}

Luhn, O. ^{[1
]}

Philipsen, H. G. G. ^{[1
]}

El-Mekki, Z. ^{[1
]}

Honore, M. ^{[1
]}

Rodet, S. ^{[1
]}

Armini, S. ^{[1
]}

Drijbooms, C. ^{[1
]}

Bender, H. ^{[1
]}

Ruythooren, W. ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 05期

关键词：

Copper; Cu; Plating; TSV; HIGH-ASPECT-RATIO; ELECTRODEPOSITION; VIAS; ADDITIVES; TRENCHES; CHEMISTRY; HOLES;

D O I：

10.1016/j.mee.2010.06.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report on Cu plating of through-silicon-vias (TSV-s) using in-house made acidic Cu bath with model additives (SPS, PEG, and JGB). Although the model additives might not be as potent as commercial additives, they have been studied in detail, and their role in Cu plating has been described extensively in scientific literature. This in turn allows deeper insight into how changes in bath composition affect the plating mechanism and Cu via-fill. (C) 2010 Elsevier B.V. All rights reserved.

引用

收藏

页码：701 / 704

页数：4

相关论文

共 21 条

[1]

[Anonymous], P IEEE INT C 3D SYST

[2] Direct numerical simulation of nucleation and three-dimensional, diffusion-controlled growth [J].

Cao, Y ;

Searson, PC ;

West, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (05) :C376-C382

[3] Evaluating the filling performance of a copper plating formula using a simple galvanostat method [J].

Dow, WP ;

Liu, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (03) :C190-C194

[4] High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed [J].

Druais, G. ;

Dilliway, G. ;

Fischer, P. ;

Guidotti, E. ;

Luhn, O. ;

Radisic, A. ;

Zahraoui, S. .

MICROELECTRONIC ENGINEERING, 2008, 85 (10) :1957-1961

[5] THE CHEMISTRY OF THE ADDITIVES IN AN ACID COPPER ELECTROPLATING BATH .1. POLYETHYLENE-GLYCOL AND CHLORIDE-ION [J].

HEALY, JP ;

PLETCHER, D ;

GOODENOUGH, M .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1992, 338 (1-2) :155-165

[6] Leveling and microstructural effects of additives for copper electrodeposition [J].

Kelly, JJ ;

Tian, CY ;

West, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (07) :2540-2545

[7] Effect of annealing and hydrogen on properties of electrodeposited platinum electrode and lead-zirconate-titanate films for ferroelectric random access memory applications [J].

Kondo, K ;

Watanabe, K ;

Abe, Y ;

Haji, J ;

Shimizu, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (10) :C688-C691

[8] Impact of pulse parameters on current distribution in high aspect ratio vias and through-holes [J].

Lee, JM ;

West, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (10) :C645-C651

[9] Changing Superfilling Mode for Copper Electrodeposition in Blind Holes from Differential Inhibition to Differential Acceleration [J].

Luehn, O. ;

Radisic, A. ;

Vereecken, P. M. ;

Van Hoof, C. ;

Ruythooren, W. ;

Celis, J. -P. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (05) :D39-D41

[10] Reducing the electrodeposition time for filling microvias with copper for 3D technology [J].

Luhn, O. ;

Radisic, A. ;

Vereecken, P. M. ;

Swinnen, B. ;

Van Hoof, C. ;

Ruythooren, W. ;

Celis, J-P .

58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS, 2008, :866-+