A change in mechanical properties of Sn-doped indium oxide layer on plastic substrates by the progress of crystallization

Flexure resistance of ITO (Sn-doped indium oxide) layer on PET (polyethylene terephthalate) substrates was changed by the progress of crystallization of it. A change in flexure resistance was composed of two processes. In the first process, remaining stress of non-annealed ITO layer was reduced by annealing and consequently flexure resistance was improved rapidly. In the second process, grain boundary stress of the crystalline phase of ITO layer was generated. When degree of crystallization was comparatively small, grain boundary stress might be restrained by the buffer effect of the amorphous phase and consequently. flexure resistance was maintained well. But when degree of crystallization was comparatively large, the buffer effect of the amorphous phase might be lost. Flexure resistance deteriorated gradually as degree of crystallization increased.