Direct-Bandgap Bilayer WSe2/Microsphere Monolithic Cavity for Low-Threshold Lasing

被引:15
作者
Yu, Jia-Xin [1 ]
Xing, Shuai [1 ]
Dai, Guang-Yu [1 ]
Ling-Hu, Shuang-Yi [1 ]
Gu, Fu-Xing [1 ]
机构
[1] Univ Shanghai Sci & Technol, Sch Opt Elect & Comp Engn, Lab Integrated Optomech & Elect, Shanghai 200093, Peoples R China
基金
中国国家自然科学基金;
关键词
bandgap engineering; bilayer transition metal dichalcogenides; lasing; monolithic cavity; photoluminescence enhancement; MOS2; LASERS;
D O I
10.1002/adma.202106502
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayer transition metal dichalcogenides (TMDs) have emerged as widely accepted 2D gain materials in the field of light sources owing to their direct bandgap and high photoluminescence quantum yield. However, the monolayer medium suffers from weak emission because only a single layer of molecules can absorb the pump energy. Moreover, the material degradation when transferring these fragile materials hinders their cooperation with the optical cavity further. In this study, for the first time, a high-quality monolithic structure is developed by directly growing single-domain tungsten diselenide (WSe2) bilayers on single silica microsphere (MS) cavities. Such a completely wrapped structure guides the indirect-to-direct bandgap transition of WSe2 bilayers, leading to a significantly improved photoluminescence intensity by about 60-fold. Moreover, the high-quality monolithic structure enhances the confinement factor of the cavity by more than 20-fold. Based on the above advantages, a bilayer WSe2/MS microlaser is realized with an ultralow threshold of 0.72 W cm(-2), nearly an order of magnitude lower than the existing records. The results demonstrate the possibility of using multilayer TMD materials as 2D gain media and provide insights into a new ultracompact monolithic platform of TMD material/cavity for lasing devices.
引用
收藏
页数:6
相关论文
共 33 条
[1]   Strain-engineered growth of two-dimensional materials [J].
Ahn, Geun Ho ;
Amani, Matin ;
Rasool, Haider ;
Lien, Der-Hsien ;
Mastandrea, James P. ;
Ager, Joel W., III ;
Dubey, Madan ;
Chrzan, Daryl C. ;
Minor, Andrew M. ;
Javey, Ali .
NATURE COMMUNICATIONS, 2017, 8
[2]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[3]   Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors [J].
Amani, Matin ;
Chin, Matthew L. ;
Mazzoni, Alexander L. ;
Burke, Robert A. ;
Najmaei, Sina ;
Ajayan, Pulickel M. ;
Lou, Jun ;
Dubey, Madan .
APPLIED PHYSICS LETTERS, 2014, 104 (20)
[4]   Strained bilayer WSe2 with reduced exciton-phonon coupling [J].
Aslan, Ozgur Burak ;
Deng, Minda ;
Brongersma, Mark L. ;
Heinz, Tony F. .
PHYSICAL REVIEW B, 2020, 101 (11)
[5]   Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires [J].
Burgess, Tim ;
Saxena, Dhruv ;
Mokkapati, Sudha ;
Li, Zhe ;
Hall, Christopher R. ;
Davis, Jeffrey A. ;
Wang, Yuda ;
Smith, Leigh M. ;
Fu, Lan ;
Caroff, Philippe ;
Tan, Hark Hoe ;
Jagadish, Chennupati .
NATURE COMMUNICATIONS, 2016, 7
[6]   Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2 [J].
Dhakal, Krishna P. ;
Dinh Loc Duong ;
Lee, Jubok ;
Nam, Honggi ;
Kim, Minsu ;
Kan, Min ;
Lee, Young Hee ;
Kim, Jeongyong .
NANOSCALE, 2014, 6 (21) :13028-13035
[7]   Nanolasers Based on 2D Materials [J].
Du, Wen ;
Li, Caihong ;
Sun, Jiachen ;
Xu, Hao ;
Yu, Peng ;
Ren, Aobo ;
Wu, Jiang ;
Wang, Zhiming .
LASER & PHOTONICS REVIEWS, 2020, 14 (12)
[8]   Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities [J].
Fu, Xinpeng ;
Fu, Xihong ;
Chen, Yongyi ;
Qin, Li ;
Peng, Hangyu ;
Shi, Ruixin ;
Li, Fangfei ;
Zhou, Qiang ;
Wang, Yubing ;
Zhou, Yinli ;
Ning, Yongqiang .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2020, 11 (02) :541-+
[9]   Analysis of the optical confinement factor in semiconductor lasers [J].
Huang, Yong-Zhen ;
Pan, Zhong ;
Wu, Rong-Han .
Journal of Applied Physics, 1996, 79 (8 pt 1) :3827-3830
[10]   Synthetic WSe2 monolayers with high photoluminescence quantum yield [J].
Kim, Hyungjin ;
Ahn, Geun Ho ;
Cho, Joy ;
Amani, Matin ;
Mastandrea, James P. ;
Groschner, Catherine K. ;
Lien, Der-Hsien ;
Zhao, Yingbo ;
Ager, Joel W., III ;
Scott, Mary C. ;
Chrzan, Daryl C. ;
Javey, Ali .
SCIENCE ADVANCES, 2019, 5 (01)