Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement

被引：4

作者：

Fang, Fang ^{[1
]}

Vaid, Alok ^{[1
]}

Vinslava, Alina ^{[1
]}

Casselberry, Richard ^{[1
]}

Mishra, Shailendra ^{[1
]}

Dixit, Dhairya ^{[1
]}

Timoney, Padraig ^{[1
]}

Chu, Dinh ^{[2
]}

Porter, Candice ^{[2
]}

Song, Da ^{[2
]}

Ren, Zhou ^{[2
]}

机构：

[1] GLOBALFOUNDRIES, 400 Stone Break Extens, Malta, NY 12020 USA

[2] KLA Tencor Corp, One Technol Dr, Milpitas, CA 95035 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXII | 2018年 / 10585卷

关键词：

SensArray EtchTemp-SE technology; electrostatic chuck (ESC) temperature; chamber to chamber mismatching; edge yield enhancement; recess depth; critical dimensions (CD);

D O I：

10.1117/12.2297213

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

With advances in new technology it is getting more important to monitor all aspects of the influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. With this in mind, a study to dive into "measuring what matters" was designed to acquire electrostatic chuck (ESC) temperature measurements in actual process conditions using a KLA-TencorSensArray EtchTemp-SE (ETSE) wafer. The ESC temperature profile was measured on a 300mm wafer under plasma-on conditions to reproduce actual temperature conditions of wafers in the production process. Temperature maps were compared with a control reference (ESC temperature in static plasma-off status), and using this information, chamber to chamber matching was also investigated. Furthermore, a correlation study between ESC temperature and inline optical metrology measurements offers clear direction for process tuning through set-temperature modulations.

引用

页数：6