Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

被引：2
作者：
Yang, Hung-Pin D. [1 ]
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Yung
机构：
[1] Nanophoton Ctr, Ind Technol Res Inst, Hsinchu 310, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 10A期
关键词：
broad-area; submonolayer; quantum-dot; VCSEL;
D O I：
10.1143/JJAP.46.6670
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.
引用
收藏
页码：6670 / 6672
页数：3
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