Interfacial chemistry of Alq3 and LiF with reactive metals

被引:331
作者
Mason, MG [1 ]
Tang, CW
Hung, LS
Raychaudhuri, P
Madathil, J
Giesen, DJ
Yan, L
Le, QT
Gao, Y
Lee, ST
Liao, LS
Cheng, LF
Salaneck, WR
dos Santos, DA
Brédas, JL
机构
[1] Eastman Kodak Co, Res Labs, Rochester, NY 14650 USA
[2] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[3] City Univ Hong Kong, Ctr Super Diamond Res, Dept Phys & Mat Res, Kowloon, Hong Kong, Peoples R China
[4] Linkoping Univ, Dept Phys IFM, S-58183 Linkoping, Sweden
[5] Univ Mons, Ctr Rech Electron & Photon Mol, B-7000 Mons, Belgium
[6] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
关键词
D O I
10.1063/1.1324681
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structure and chemistry of interfaces between tris-(8-hydroxyquinoline) aluminum (Alq(3)) and representative group IA and IIA metals, Al, and Al/LiF have been studied by x-ray and ultraviolet photoelectron spectroscopies. Quantum-chemical calculations at the density functional theory level predict that the Alq(3) radical anion is formed upon reaction with the alkali metals. In this case, up to three metal atoms can react with a given Alq(3) molecule to form the trivalent anion. The anion formation results in a splitting of the N 1s core level and formation of a new feature in the previously forbidden energy gap. Virtually identical spectra are observed in the Al/LiF/Alq(3) system, leading to the conclusion that the radical anion is also formed when all three of these constituents are present. This is support by a simple thermodynamic model based on bulk heats of formation. In the absence of LiF or similar material, the reaction of Al with Alq(3) appears to be destructive, with the deposited Al reacting directly with the quinolate oxygen. We proposed that in those circumstances where the radical anion is formed, it and not the cathode metal are responsible for the electron injection properties. This is borne out by producing excellent injecting contacts when Ag and Au are used as the metallic component of the cathode structure. (C) 2001 American Institute of Physics.
引用
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页码:2756 / 2765
页数:10
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