Spin transport in multiterminal devices: Large spin signals in devices with confined geometry

被引：57

作者：

Jaffres, H. ^{[1
]}

George, J. -M.

Fert, A.

机构：

[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 14期

关键词：

MAGNETORESISTANCE; MULTILAYERS;

D O I：

10.1103/PhysRevB.82.140408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a general analytical theory based on the transfer-matrix formalism to describe the spin transport in multiterminal lateral devices with metallic, semiconducting, or carbon-based conducting channels. Our theory expresses local and nonlocal spin resistances as a function of components of the transfer matrices. An important result for practical devices is the prediction that confined geometries can give much larger spin signals than those of the already known standard situation.

引用

页数：4

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