Band offsets in ITO/Ga2O3 heterostructures

被引：44
作者：
Carey, Patrick H. [1 ]
Ren, F. [1 ]
Hays, David C. [2 ]
Gila, B. P. [2 ]
Pearton, S. J. [2 ]
Jang, Soohwan [3 ]
Kuramata, Akito [4 ,5 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[4] Tamura Corp, Sayama, Saitama 3501328, Japan
[5] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan
来源：
APPLIED SURFACE SCIENCE | 2017年 / 422卷
基金：
新加坡国家研究基金会;
关键词：
Ga2O3; RAY PHOTOELECTRON-SPECTROSCOPY; SCHOTTKY-BARRIER DIODES; PRECISE DETERMINATION; OXIDE-FILMS; BETA-GA2O3; ELECTRODE; DEVICES; POWER;
D O I：
10.1016/j.apsusc.2017.05.262
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal beta-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be - 0.78 +/- 0.30 eV, while the conduction band offset was determined to be - 0.32 +/- 0.13 eV. The ITO/ Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors. (C) 2017 Elsevier B.V. All rights reserved.
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收藏
页码：179 / 183
页数：5
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