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Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
被引:76
|作者:
Tong, Hua
[1
]
Zhang, Jing
[1
]
Liu, Guangyu
[1
]
Herbsommer, Juan A.
[1
]
Huang, G. S.
[1
]
Tansu, Nelson
[1
]
机构:
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
基金:
美国国家科学基金会;
关键词:
aluminium compounds;
electrical conductivity;
electrical resistivity;
III-V semiconductors;
indium compounds;
MOCVD;
Seebeck effect;
semiconductor thin films;
thermal conductivity;
THERMAL-CONDUCTIVITY;
INN;
FILMS;
AL1-XINXN;
MOVPE;
GAN;
D O I:
10.1063/1.3489086
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al0.83In0.17N alloy exhibited thermal conductivity of 4.87 W/(m K) measured by 3 omega differential method. The Seebeck coefficient of n-Al0.83In0.17N was measured as -6.012x10(-4) V/K by thermal gradient method. The sheet resistivity of n-Al0.83In0.17N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38x10(4)/(Omega m). The thermoelectric figure of merit (Z*T) of n-type Al0.83In0.17N was measured as 0.532 at room temperature (T=300 K). The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489086]
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