Impact ionization in β-Ga2O3

被引:118
作者
Ghosh, Krishnendu [1 ]
Singisetti, Uttam [1 ]
机构
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
基金
美国国家科学基金会;
关键词
OPTICAL-PROPERTIES; HOT-ELECTRONS; CRYSTAL; TRANSPORT; RATES;
D O I
10.1063/1.5034120
中图分类号
O59 [应用物理学];
学科分类号
摘要
A theoretical investigation of extremely high field transport in an emerging wide-bandgap material beta-Ga2O3 is reported from first principles. The signature high-field effect explored here is impact ionization. The interaction between a valence-band electron and an excited electron is computed from the matrix elements of a screened Coulomb operator. Maximally localized Wannier functions are utilized in computing the impact ionization rates. A full-hand Monte Carlo simulation is carried out incorporating the impact ionization rates and electron-phonon scattering rates. This work brings out valuable insights into the impact ionization coefficient (IIC) of electrons in beta-Ga2O3. The isolation of the Gamma point conduction band minimum by a significantly high energy from other satellite band pockets plays a vital role in determining ionization co-efficients. IICs are calculated for electric fields ranging up to 8 MV/cm for different crystal directions. A Chynoweth fitting of the computed IICs is done to calibrate ionization models in device simulators. Published by AIP Publishing.
引用
收藏
页数:7
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