Optical properties of indium phosphide nanowire ensembles at various temperatures

被引:26
作者
Lohn, Andrew J. [1 ]
Onishi, Takehiro
Kobayashi, Nobuhiko P.
机构
[1] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA
关键词
DEPENDENT PHOTOLUMINESCENCE; TWINNING SUPERLATTICES; INP NANOWIRES; BAND-GAP; NANONEEDLES;
D O I
10.1088/0957-4484/21/35/355702
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.
引用
收藏
页数:6
相关论文
共 22 条
[1]   Twinning superlattices in indium phosphide nanowires [J].
Algra, Rienk E. ;
Verheijen, Marcel A. ;
Borgstrom, Magnus T. ;
Feiner, Lou-Fe ;
Immink, George ;
van Enckevort, Willem J. P. ;
Vlieg, Elias ;
Bakkers, Erik P. A. M. .
NATURE, 2008, 456 (7220) :369-372
[2]  
Bergman L, 2000, SPRINGER SERIES MATE, V42, P273
[3]   Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].
Chuang, Linus C. ;
Moewe, Michael ;
Chase, Chris ;
Kobayashi, Nobuhiko P. ;
Chang-Hasnain, Connie ;
Crankshaw, Shanna .
APPLIED PHYSICS LETTERS, 2007, 90 (04)
[4]   Size-dependent photoluminescence from single indium phosphide nanowires [J].
Gudiksen, MS ;
Wang, JF ;
Lieber, CM .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (16) :4036-4039
[5]   Properties of GaN and related compounds studied by means of Raman scattering [J].
Harima, H .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) :R967-R993
[6]   Dynamic manipulation and separation of individual semiconducting and metallic nanowires [J].
Jamshidi, Arash ;
Pauzauskie, Peter J. ;
Schuck, P. James ;
Ohta, Aaron T. ;
Chiou, Pei-Yu ;
Chou, Jeffrey ;
Yang, Peidong ;
Wu, Ming C. .
NATURE PHOTONICS, 2008, 2 (02) :85-89
[7]   Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces [J].
Kobayashi, N. P. ;
Wang, S. -Y. ;
Santori, C. ;
Williams, R. S. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 85 (01) :1-6
[8]   Indium phosphide nanoneedles on non-single crystalline semiconductor surfaces [J].
Kobayashi, Nobuhiko P. ;
Wang, Shih-Yuan ;
Santori, Charles ;
Williams, R. Stanley .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9B) :6346-6351
[9]   Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms [J].
Kobayashi, Nobuhiko P. ;
Mathai, Sagi ;
Li, Xuema ;
Logeeswaran, V. J. ;
Islam, M. Saif ;
Lohn, Andrew ;
Onishi, Takehiro ;
Straznicky, Joseph ;
Wang, Shih-Yuan ;
Williams, R. Stanley .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (04) :1005-1013
[10]   Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy [J].
Kobayashi, Yasunori ;
Fukul, Masayasu ;
Motohisa, Junichi ;
Fukui, Takashi .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06) :2204-2206