Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

被引：147

作者：

Amiri, P. Khalili ^{[1
]}

Zeng, Z. M. ^{[2
]}

Langer, J. ^{[3
]}

Zhao, H. ^{[4
]}

Rowlands, G. ^{[5
]}

Chen, Y. -J. ^{[5
]}

Krivorotov, I. N. ^{[5
]}

Wang, J. -P. ^{[4
]}

Jiang, H. W. ^{[2
]}

Katine, J. A. ^{[6
]}

Huai, Y. ^{[7
]}

Galatsis, K. ^{[1
]}

Wang, K. L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

[3] Singulus Technol, D-63796 Kahl, Germany

[4] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[5] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 96297 USA

[6] Hitachi Global Storage Technol, San Jose, CA 95135 USA

[7] Avalanche Technol, Fremont, CA 94538 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

SPIN-TRANSFER; REVERSAL;

D O I：

10.1063/1.3567780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities similar to 4 MA/cm(2) are obtained at 10 ns write times. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567780]

引用

页数：3

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