Highly flexible ZnO/Ag/ZnO conducting electrode for organic photonic devices

被引:46
|
作者
Kim, Jun Ho [1 ]
Lee, Jeong Hwan [2 ]
Kim, Sang-Woo [2 ,3 ]
Yoo, Young-Zo [4 ]
Seong, Tae-Yeon [1 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[3] Sungkyunkwan Univ SKKU, Ctr Human Interface Nanotechnol HINT, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[4] Duksan Himetal Co Ltd, Ulsan 683804, South Korea
关键词
D; ZnO; Ag; Multi layer; Flexibility; Transparent conducting electrode; STRUCTURAL-PROPERTIES; TRANSPARENT; MULTILAYER; FILMS; OXIDE; GROWTH; FIGURE; ANODE;
D O I
10.1016/j.ceramint.2015.02.031
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated the electrical, optical and bending characteristics of ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer film deposited on polyethylene terephthalate (PET) substrate and compared them with those of indium-tin-oxide (ITO) (100 nm thick). The ITO single and ZnO/Ag/ZnO multilayer films gave maximum transmittance of 92.9% and similar to 95% at similar to 530 nm, respectively. For the ITO single and ZnO/Ag/ZnO multilayer films, the carrier concentration was measured to be 1.19 x 10(20) and 6.68 x 1021 cm(-3), respectively and the mobility was 32.06 and 21.06 cm(2)/V s, respectively. The sheet resistance was 175.99 and 4.98 Omega/sq for the ITO single and ZnO/Ag/ZnO multilayer films, respectively. Haacke's figure of merit (FOM) of the ITO single and ZnO/Ag/ZnO multilayer films was calculated to be 2.36 x 10(-3) and 104.5 x 10(-3) Omega(-1). The ZnO/Ag/ZnO multilayer films showed dramatically improved mechanical stability when subjected to bending test. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:7146 / 7150
页数:5
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