Atomic-scale characterization of metal micro-electrodes grown on clean semiconductor surfaces

被引：1
作者：
Uchihashi, T
Ramsperger, U
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan
[2] ETH, Festkorperphys Lab, CH-8093 Zurich, Switzerland
来源：
THIN SOLID FILMS | 2003年 / 438卷
关键词：
nanostructures; scanning tunneling microscopy; surface morphology;
D O I：
10.1016/S0040-6090(03)00759-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the growth behavior of Ag micro-pads on the Si(I 1 1)7 X 7 and Si(I 1 l)-4 X 1-In surfaces, with particular attention to the morphology near the pad edges. Substrate surfaces in the vicinity of the pads have negligible extrinsic contamination or defects, maintaining their native atomic structures. In the case of the Si(I 1 1)7 X 7 surface, however, the surface always accompanies Ag clusters migrating from the pad regardless of the growth temperature. In contrast, the Si(I 1 I)-4x I-In surface is free of Ag clusters up to the pad edge when the growth is taken at low temperature. This sharp and well-defined boundary would be crucial for electrical connection to molecular assemblies formed on substrates. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：61 / 64
页数：4
相关论文
共 15 条
[1]   Electronic growth of Pb islands on Si(111) at low temperature [J].
Chang, SH ;
Su, WB ;
Jian, WB ;
Chang, CS ;
Chen, LJ ;
Tsong, TT .
PHYSICAL REVIEW B, 2002, 65 (24) :1-6
[2]   Reproducible measurement of single-molecule conductivity [J].
Cui, XD ;
Primak, A ;
Zarate, X ;
Tomfohr, J ;
Sankey, OF ;
Moore, AL ;
Moore, TA ;
Gust, D ;
Harris, G ;
Lindsay, SM .
SCIENCE, 2001, 294 (5542) :571-574
[3]   Novel growth of Ag islands on Si(III): Plateaus with a singular height [J].
Gavioli, L ;
Kimberlin, KR ;
Tringides, MC ;
Wendelken, JF ;
Zhang, ZY .
PHYSICAL REVIEW LETTERS, 1999, 82 (01) :129-132
[4]   Electronics using hybrid-molecular and mono-molecular devices [J].
Joachim, C ;
Gimzewski, JK ;
Aviram, A .
NATURE, 2000, 408 (6812) :541-548
[5]   PHYSICS AND ELECTRONICS OF THE NOBLE-METAL ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION - A STATUS-REPORT [J].
LELAY, G .
SURFACE SCIENCE, 1983, 132 (1-3) :169-204
[6]   Kondo resonance in a single-molecule transistor [J].
Liang, WJ ;
Shores, MP ;
Bockrath, M ;
Long, JR ;
Park, H .
NATURE, 2002, 417 (6890) :725-729
[7]  
Monch W., 2001, SEMICONDUCTOR SURFAC
[8]   Competing classical and quantum effects in shape relaxation of a metallic island [J].
Okamoto, H ;
Chen, DM ;
Yamada, T .
PHYSICAL REVIEW LETTERS, 2002, 89 (25)
[9]   Fabrication and lateral electronic transport measurements of gold nanowires [J].
Ramsperger, U ;
Uchihashi, T ;
Nejoh, H .
APPLIED PHYSICS LETTERS, 2001, 78 (01) :85-87
[10]   INITIAL-STAGE OF AG CONDENSATION ON SI(111)7X7 [J].
TOSCH, S ;
NEDDERMEYER, H .
PHYSICAL REVIEW LETTERS, 1988, 61 (03) :349-352
12