Interface reactions between silicon carbide and metals (Ni, Cr, Pd, Zr)

被引：103

作者：

Bhanumurthy, K

Schmid-Fetzer, R

机构：

[1] TU Clausthal, AG Elekt Mat, D-37678 Clausthal Zellerfeld, Germany

[2] Bhabha Atom Res Ctr, Div Sci Mat, Bombay 400085, Maharashtra, India

来源：

COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING | 2001年 / 32卷 / 3-4期

关键词：

interface reactions;

D O I：

10.1016/S1359-835X(00)00049-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interface reactions between silicon carbide (SiC) and metals Cr, Zr, Ni and Pd have been studied in the temperature range of 700-1300 degreesC by employing bulk diffusion couples. The reaction products have been identified by SEM/EDX and EPMA. It has been observed that interface reactions between SiC/Cr and SiC/Zr show layered structures and interface reactions between that of SiC/Ni and SiC/Pd show periodic bands in the reaction zone. The observed diffusion paths are related to the respective ternary isothermal phase diagrams. Based on the ternary solid state equilibria and diffusion paths, interpretations pertaining to the nature of reaction products and reaction morphology are: discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：569 / 574

页数：6

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