The effect of ionization threshold softness on the temperature dependence of the impact ionization coefficient

被引：11

作者：

Groves, C ^{[1
]}

David, JPR ^{[1
]}

Rees, GJ ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 07期

关键词：

D O I：

10.1088/0268-1242/18/7/316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the ionization threshold softness on the temperature variation of impact ionization coefficients is examined theoretically. It is found that increasing the softness reduces the temperature dependence of ionization, because temperature induced heating or cooling of the carrier distribution results in a smaller change in the ionization scattering rate sampled. This may explain the wide variation in the temperature dependence of breakdown voltage reported in the literature and the difficulty in modelling accurately the temperature dependence of the ionization process.

引用

页码：689 / 692

页数：4

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