Structural and optical properties of thermally annealed TiO2-SiO2 binary thin films synthesized by sol-gel method
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作者:
Amin, Peshawa O.
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Univ Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, IraqUniv Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
Amin, Peshawa O.
[1
]
Kadhim, Asmaa J.
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Univ Baghdad, Coll Sci Women, Dept Phys, Baghdad, IraqUniv Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
Kadhim, Asmaa J.
[2
]
Ameen, Majida A.
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Univ Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, IraqUniv Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
Ameen, Majida A.
[1
]
Abdulwahid, Rebar T.
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Univ Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, IraqUniv Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
Abdulwahid, Rebar T.
[1
]
机构:
[1] Univ Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
Thermal annealing effects on structural and optical properties of TiO2-SiO2 binary thin films deposited on glass substrate were studied. X-ray diffraction was used to investigate the crystal structure of as-deposited and annealed films at different temperatures (300, 500, 600) A degrees C. The XRD pattern of annealed film at 600 A degrees C showed a growth of anatase TiO2 structure at 24.95. The surface of binary thin films were scanned by the optical microscope and revealed the crack reduction with increasing annealing temperature up to 600 A degrees C. The thickness of binary thin films were derived from spectroscopic ellipsometry data and it was found that the thickness increased linearly with increasing the annealing temperature from room temperature to 600 A degrees C. From the UV-Vis spectrophotometer the optical constants were studied and the optical band gap energies (E-g) were estimated. The results indicated that the annealing leads to an increase in the absorbance and decrease the transmittance. This can be ascribed to the slight increase in crystallite size of the films with increasing temperature. The optical energy gaps of binary thin films were direct and indirect, and both were decreased with increasing the annealing temperature which can be attributed to the homogeneous and regular dispersion of Ti and Si atoms in the mixed films and the formation of Ti-O-Si bond.
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SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Houmard, M.
;
Riassetto, D.
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LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Riassetto, D.
;
Roussel, F.
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CMTC Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Roussel, F.
;
Bourgeois, A.
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SOPRA SA, F-92270 Bois Colombes, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Bourgeois, A.
;
Berthome, G.
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SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Berthome, G.
;
Joud, J. C.
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SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Joud, J. C.
;
Langlet, M.
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LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
机构:
SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Houmard, M.
;
Riassetto, D.
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h-index: 0
机构:
LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Riassetto, D.
;
Roussel, F.
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h-index: 0
机构:
CMTC Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Roussel, F.
;
Bourgeois, A.
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h-index: 0
机构:
SOPRA SA, F-92270 Bois Colombes, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Bourgeois, A.
;
Berthome, G.
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h-index: 0
机构:
SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Berthome, G.
;
Joud, J. C.
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h-index: 0
机构:
SIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France
Joud, J. C.
;
Langlet, M.
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h-index: 0
机构:
LMGP Grenoble Inst Technol, F-38016 Grenoble 1, FranceSIMaP Grenoble Inst Technol, F-38402 St Martin Dheres, France