Structural and optical properties of thermally annealed TiO2-SiO2 binary thin films synthesized by sol-gel method

被引:31
作者
Amin, Peshawa O. [1 ]
Kadhim, Asmaa J. [2 ]
Ameen, Majida A. [1 ]
Abdulwahid, Rebar T. [1 ]
机构
[1] Univ Sulaimani, Dept Phys, Coll Educ, Adv Mat Res Lab, City Campus, Sulaimani 46001, Kurdistan Regio, Iraq
[2] Univ Baghdad, Coll Sci Women, Dept Phys, Baghdad, Iraq
关键词
IN-SITU SYNTHESIS; PHOTOCATALYTIC ACTIVITY; COMPOSITE; WATER; NANOCRYSTALS; TEMPERATURE; COATINGS;
D O I
10.1007/s10854-018-9688-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thermal annealing effects on structural and optical properties of TiO2-SiO2 binary thin films deposited on glass substrate were studied. X-ray diffraction was used to investigate the crystal structure of as-deposited and annealed films at different temperatures (300, 500, 600) A degrees C. The XRD pattern of annealed film at 600 A degrees C showed a growth of anatase TiO2 structure at 24.95. The surface of binary thin films were scanned by the optical microscope and revealed the crack reduction with increasing annealing temperature up to 600 A degrees C. The thickness of binary thin films were derived from spectroscopic ellipsometry data and it was found that the thickness increased linearly with increasing the annealing temperature from room temperature to 600 A degrees C. From the UV-Vis spectrophotometer the optical constants were studied and the optical band gap energies (E-g) were estimated. The results indicated that the annealing leads to an increase in the absorbance and decrease the transmittance. This can be ascribed to the slight increase in crystallite size of the films with increasing temperature. The optical energy gaps of binary thin films were direct and indirect, and both were decreased with increasing the annealing temperature which can be attributed to the homogeneous and regular dispersion of Ti and Si atoms in the mixed films and the formation of Ti-O-Si bond.
引用
收藏
页码:16010 / 16020
页数:11
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