Irradiation effects in 6H-SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

被引：42

作者：

Chen, Xiaofei ^{[1
]}

Zhou, Wei ^{[2
]}

Feng, Qijie ^{[2
]}

Zheng, Jian ^{[2
]}

Liu, Xiankun ^{[2
]}

Tang, Bin ^{[2
]}

Li, Jiangbo ^{[2
]}

Xue, Jianming ^{[1
]}

Peng, Shuming ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

[2] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2016年 / 478卷

关键词：

SiC; Neutron irradiation; Ion irradiation; Total disorder; Lattice strain; BEAM-INDUCED AMORPHIZATION; DAMAGE PRODUCTION; DOSE DEPENDENCE; SILICON-CARBIDE; MICROSTRUCTURE; TEMPERATURE; PROTON; 6H; SCATTERING; EMULATION;

D O I：

10.1016/j.jnucmat.2016.06.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Irradiation effects of neutron and 3 MeV C+, Si+ in 6H-SiC were investigated by Raman spectroscopy and high-resolution XRD. The total disorder values of neutron irradiated SiC agree well with that of samples irradiated by ions at the same doses respectively. On the other hand, high-resolution XRD results shows that the lattice strain rate caused by neutron irradiation is 6.8%/dpa, while it is only 2.6%/dpa and 4.2%/dpa for Si+ and C+ irradiations respectively. Our results illustrate that the total disorder in neutron irradiated SiC can be accurately simulated by MeV Si+ or C+ irradiations at the same dose, but for the lattice strain and strain-related properties like surface hardness, the depth profile of irradiation damages induced by energetic ions must be considered. This research will contribute to a better understanding of the difference in irradiation effects between neutron and heavy ions. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：215 / 221

页数：7

共 50 条

[1] Dependence of the stress-temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H-SiC substrates
Ahmad, I
Holtz, M
Faleev, NN
Temkin, H
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1692 - 1697
[2] Spatial characterization of doped SiC wafers by Raman spectroscopy
Burton, JC
Sun, L
Pophristic, M
Lukacs, SJ
Long, FH
Feng, ZC
Ferguson, IT
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6268 - 6273
[3] MECHANICAL, THERMAL, AND MICROSTRUCTURAL PROPERTIES OF NEUTRON-IRRADIATED SIC
CORELLI, JC
HOOLE, J
LAZZARO, J
LEE, CW
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1983, 66 (07) : 529 - 537
[4] Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
Debelle, A.
Thome, L.
Dompoint, D.
Boulle, A.
Garrido, F.
Jagielski, J.
Chaussende, D.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (45)
[5] Displacement energy surface in 3C and 6H SiC
Devanathan, R
Weber, WJ
[J]. JOURNAL OF NUCLEAR MATERIALS, 2000, 278 (2-3) : 258 - 265
[6] Proton irradiation effect on microstructure, strain localization and iodine-induced stress corrosion cracking in Zircaloy-4
Fournier, L.
Serres, A.
Auzoux, Q.
Leboulch, D.
Was, G. S.
[J]. JOURNAL OF NUCLEAR MATERIALS, 2009, 384 (01) : 38 - 47
[7] Cascade overlap and amorphization in 3C-SiC: Defect accumulation, topological features, and disordering
Gao, F
Weber, WJ
[J]. PHYSICAL REVIEW B, 2002, 66 (02) : 1 - 10
[8] Gao F., 2000, MATTER, V63, P811
[9] Design requirements for SiC/SiC composites structural material in fusion power reactor blankets
Giancarli, L
Bonal, JP
Caso, A
Le Marois, G
Morley, NB
Salavy, JF
[J]. FUSION ENGINEERING AND DESIGN, 1998, 41 : 165 - 171
[10] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

← 1 2 3 4 5 →