High temperature electrical conductivity in undoped ceramic ZnO

被引：1

作者：

Lott, K. ^{[1
]}

Nirk, T. ^{[1
]}

Gorokhova, E. ^{[2
]}

Tuern, L. ^{[1
]}

Viljus, M. ^{[1
]}

Oepik, A. ^{[1
]}

Vishnjakov, A. ^{[3
]}

机构：

[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia

[2] SI Vavilov State Opt Inst, St Petersburg 192171, Russia

[3] D Mendelejev Univ Chem Technol Russia, Dept Phys Chem, Moscow 125047, Russia

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2015年 / 50卷 / 01期

关键词：

zinc oxide; high temperature; electrical conductivity; defects; DEFECT STRUCTURE; ZINC-OXIDE; VACANCY;

D O I：

10.1002/crat.201400138

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The results of high temperature electrical conductivity (HTEC) measurements in undoped ceramic ZnO sample are presented. The ceramic sample under investigation was formed at high pressure and at high temperature in inert atmosphere. HTEC measurements data were obtained under the defined Zn component vapor pressure (up to 1 atm) and in temperature range (up to 1373 K). In these experiments the absolute value of HTEC in ZnO samples was several orders of magnitude higher than in undoped ZnS measured under the same conditions. Slow chemical diffusion was observed in ZnO. Slopes of HTEC isotherms in ZnO samples varied with component vapor pressure in the range from 0 to 0.2. Defect model for explanation of this experiment is discussed.

引用

页码：10 / 14

页数：5

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