Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

被引：16

作者：

Reznicek, A ^{[1
]}

Scholz, R ^{[1
]}

Senz, S ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 81卷 / 2-3期

关键词：

silicon; wafer bonding; interface defects;

D O I：

10.1016/S0254-0584(02)00601-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Wafers of Czochralski-grown silicon were bonded hydrophilically, hydrophobically and in ultrahigh vacuum (UHV) at room temperature. Wafers bonded hydrophilically adhere together by hydrogen bonds, those bonded hydrophobically by van der Waals forces and UHV-bonded ones by covalent bonds. Annealing the pre-bonded hydrophilic and hydrophobic wafer pairs in argon for 2 h at different temperatures increases the initially low bonding energy. UHV-bonded wafer pairs were also annealed to compare the results. Transmission electron microscopy (TEM) investigations show nano-voids at the interface. The void density depends on the initial bonding strength. During annealing the shape, coverage and density of the voids change significantly. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 280

页数：4

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