Chemical structure of vanadium-based contact formation on n-AlN

被引：8

作者：

Pookpanratana, S. ^{[1
]}

France, R. ^{[2
]}

Blum, M. ^{[1
]}

Bell, A. ^{[3
]}

Baer, M. ^{[1
,4
]}

Weinhardt, L. ^{[5
]}

Zhang, Y. ^{[1
]}

Hofmann, T. ^{[1
]}

Fuchs, O. ^{[5
]}

Yang, W. ^{[6
]}

Denlinger, J. D. ^{[6
]}

Mulcahy, S. ^{[3
]}

Moustakas, T. D. ^{[2
]}

Heske, C. ^{[1
]}

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[3] Univ Nevada, Dept Geosci, Las Vegas, NV 89154 USA

[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Solar Energy Res, D-14109 Berlin, Germany

[5] Univ Wurzburg, D-97074 Wurzburg, Germany

[6] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 02期

关键词：

NEGATIVE ELECTRON-AFFINITY; NITRIDE; GAN; EMISSION; SPECTRA; METAL; BLUE;

D O I：

10.1063/1.3456060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the chemical interaction between a Au/V/Al/V layer structure and n-type AlN epilayers using soft x-ray photoemission, x-ray emission spectroscopy, and atomic force microscopy. To understand the complex processes involved in this multicomponent system, we have studied the interface before and after a rapid thermal annealing step. We find the formation of a number of chemical phases at the interface, including VN, metallic vanadium, aluminum oxide, and metallic gold. An interaction mechanism for metal contact formation on the entire n-(Al,Ga)N system is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456060]

引用

页数：6

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