Field-emission-display basic structure using Si-doped AlN

被引：0
作者：
Taniyasu, Y [1 ]
Kasu, M [1 ]
Makimoto, T [1 ]
Kobayashi, N [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Musashino, Tokyo, Japan
来源：
TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE | 2003年
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D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
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页码：249 / 250
页数：2
相关论文
共 3 条
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[2]   Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1-xN (0.38≤x<1) [J].
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APPLIED PHYSICS LETTERS, 2001, 79 (22) :3642-3644
[3]   Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42≤x<1) [J].
Taniyasu, Y ;
Kasu, M ;
Kobayashi, N .
APPLIED PHYSICS LETTERS, 2002, 81 (07) :1255-1257
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