Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

被引：83

作者：

Jiao, L. ^{[1
]}

Liu, H. J. ^{[1
]}

Chen, J. L. ^{[1
]}

Yi, Y. ^{[2
]}

Chen, W. G. ^{[3
]}

Cai, Y. ^{[2
]}

Wang, J. N. ^{[2
]}

Dai, X. Q. ^{[3
,4
]}

Wang, N. ^{[2
]}

Ho, W. K. ^{[1
]}

Xie, M. H. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

[3] Zhengzhou Normal Univ, Dept Phys, Zhengzhou 450044, Henan, Peoples R China

[4] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Peoples R China

来源：

NEW JOURNAL OF PHYSICS | 2015年 / 17卷

关键词：

transition metal dichalcogenides; MoSe2; molecular beam epitaxy; van der waals epitaxy; surface nucleation; domain boundary; TRANSITION-METAL DICHALCOGENIDES; DER-WAALS EPITAXY; THIN-FILMS; IMAGES;

D O I：

10.1088/1367-2630/17/5/053023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. Adramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.

引用

页数：8

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