High Performance Single-Grain Ge TFTs without Seed Substrate

被引：0

作者：

Chen, Tao ^{[1
]}

Ishihara, Ryoichi ^{[1
]}

Mofrad, M. R. Tajari ^{[1
]}

Vollebregt, Sten ^{[1
]}

van der Cingel, Johan ^{[1
]}

van der Zwan, M. ^{[1
]}

Schellevis, Hugo ^{[1
]}

Beenakker, Kees ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect Technol DIMES, NL-2628 CT Delft, Netherlands

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high performance single-grain Ge TFTs by mu-Czochralski process. Electron mobilites are 3337cm(2)/Vs with on/off ratio of 10(8) @V-DS=0.1V. Hole mobilities are 1719cm(2)/Vs with on/off ratio of 10(8) @ V-DS=0.05V. The high mobility is due to improved interface property and tensile stress.

引用

页数：4

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