High Performance Single-Grain Ge TFTs without Seed Substrate

被引:0
|
作者
Chen, Tao [1 ]
Ishihara, Ryoichi [1 ]
Mofrad, M. R. Tajari [1 ]
Vollebregt, Sten [1 ]
van der Cingel, Johan [1 ]
van der Zwan, M. [1 ]
Schellevis, Hugo [1 ]
Beenakker, Kees [1 ]
机构
[1] Delft Univ Technol, Delft Inst Microsyst & Nanoelect Technol DIMES, NL-2628 CT Delft, Netherlands
来源
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report high performance single-grain Ge TFTs by mu-Czochralski process. Electron mobilites are 3337cm(2)/Vs with on/off ratio of 10(8) @V-DS=0.1V. Hole mobilities are 1719cm(2)/Vs with on/off ratio of 10(8) @ V-DS=0.05V. The high mobility is due to improved interface property and tensile stress.
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页数:4
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