GaN nanodot fabrication by implant source growth

被引：3

作者：

Buckmaster, R

Yoo, JH

Shin, K

Yao, Y

Sekiguchi, T

Yokoyama, M

Hanada, T

Goto, T

Cho, M

Kawazoe, Y

Yao, T

机构：

[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] Changwon Natl Univ, Dept Met & Mat Sci, Chang Won 641773, Kyungnum, South Korea

[4] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[5] Horiba Ltd, Photon Frontier Project R&D Ctr, Tokyo 1010031, Japan

来源：

MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 3-6期

关键词：

GaN; nanodot; ion beam synthesis; self-assembly;

D O I：

10.1016/j.mejo.2005.02.046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO2. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO2 layer by using a focused ion beam system followed by annealing under an NH3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：456 / 459

页数：4

共 9 条

[1]

BUCKMASTER R, 2005, IN PRESS NANO LETT

[2] MICROCRYSTAL GROWTH OF GAAS ON A SE-TERMINATED GAALAS SURFACE FOR THE QUANTUM-WELL BOX STRUCTURE BY SEQUENTIAL SUPPLIES OF GA AND AS MOLECULAR-BEAMS [J].