Experimental NV and NeVIII low-temperature dielectronic recombination rate coefficients

被引:11
作者
Böhm, S
Müller, A
Schippers, S
Shi, W
Fogle, M
Glans, P
Schuch, R
Danared, H
机构
[1] Univ Giessen, Inst Atom & Mol Phys, D-35392 Giessen, Germany
[2] Univ Stockholm, S-10691 Stockholm, Sweden
[3] Manne Siegbahn Lab, S-10405 Stockholm, Sweden
关键词
atomic data; atomic processes; line : formation; plasmas; radiation mechanisms : general;
D O I
10.1051/0004-6361:20042500
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
The dielectronic recombination rate coefficients of N V and Ne VIII ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to 2s -> 2p (Delta n = 0) core excitations. The rate coefficients in a plasma were derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients were then compared to theoretical data. In addition the influence of external electric fields with field strengths up to 1300 V/cm on the dielectronic recombination rate coefficient was investigated.
引用
收藏
页码:1151 / 1157
页数:7
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