Technology Migration Study of Digital CMOS Temperature Sensors

被引：0
|
作者：
Wang, Jinn-Shyan [1 ]
He, Zong-Wu
Lee, Jen-Hsiang
Lee, Shang-Yi
机构：
[1] Natl Chung Cheng Univ, Dept EE, Chiayi 621, Taiwan
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年
关键词：
temperature sensor; all digital; technology migration;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on a truly all-digital 90-nm CMOS temperature sensor (TS), evaluation results of 40-/28-nm CMOS TSs designed by technology migration methodology are described in this paper. Stacked inverters and a new 1-point calibration method can be used to reduce the sensing errors by more than 60% and 80% for 40- and 28-nm TSs, respectively.
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页数：2
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