Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime

被引：42
|
作者：
Hirakawa, K
Yamanaka, K
Kawaguchi, Y
Endo, M
Saeki, M
Komiyama, S
机构：
[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan
[2] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 1538902, Japan
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.63.085320
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the far-infrared (FIR) photoinduced resistance change of the two-dimensional electron systems in AlxGa1-xAs/GaAs heterojunctions in the integer quantized Hall regime. Sensitive photoinduced resistance change DeltaR(xx) is observed only in the vicinity of the quantum Hall states. It is found that the magnitude and polarity of DeltaR(xx) strongly depend on the Landau-level filling factor and the bias current. We have shown that not only a bolometric effect (i.e., electron heating) but also an electronic process due to edge channel transport is responsible for the observed behavior of DeltaR(xx). The observed photoresponse can be used for realizing very sensitive, narrow-band FIR detectors.
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页数：5
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