Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure

被引：0

作者：

Huber, JL ^{[1
]}

Reed, MA

Kramer, G

Goronkin, H

机构：

[1] Yale Univ, New Haven, CT 06520 USA

[2] Motorola Inc, PCRL, Schaumburg, IL 60196 USA

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The magnetotunneling characteristics of a p-type well InAs/AlSb/GaSb resonant interband tunneling structure are investigated Experimental results indicate that tunneling occurs through multiple subbands, including both light-hole and heavy-hole like subbands. The data can be used to plot out critical points on the GaSb subband structure.

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页码：593 / 596

页数：4

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