Electrical properties optimization of Ba0.9Sr0.1TiO3 thin films deposited by sol-gel

被引：7
作者：
Fasquelle, D. [1 ]
Mascot, M. [1 ]
Carru, J. C. [1 ]
机构：
[1] Univ Littoral Cote dOpale, UDSMM LEMCEL, F-62228 Calais, France
来源：
ADVANCED MATERIALS RESEARCH QIR 12 | 2011年 / 277卷
关键词：
BST; thin films; sol-gel; dielectric; ferroelectric; tunability; DIELECTRIC-PROPERTIES; LAYER; (BA; SR)TIO3;
D O I：
10.4028/www.scientific.net/AMR.277.1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports a study of Ba0.9Sr0.1TiO3 films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750 degrees C, 850 degrees C and 950 degrees C. An increase of the average size of gains was observed, from 60 nm at 750 degrees C to 110 nm at 950 degrees C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950 degrees C for 15 min) give the following results: epsilon(r) = 780 and tg delta = 0.01 at 100 kHz, Pr = 13 mu C/cm(2), Ec = 63 kV/cm and a tunability of 55%.
引用
收藏
页码：1 / 10
页数：10
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