Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells

被引：28

作者：

Chi, Yue-meng

Shi, Jun-jie ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 11期

基金：

中国国家自然科学基金;

关键词：

InGaN quantum wells; built-in electric field; linear and nonlinear intersubband optical absorptions;

D O I：

10.1016/j.jlumin.2008.05.006

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Considering the strong built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations and the intrasubband relaxation, we investigate the linear and nonlinear intersubband optical absorptions in InxGa1-xN/AlyGa1-yN strained single quantum wells (QWs) by means of the density matrix formalism. Our numerical results show that the strong BEF is on the order of MV/cm, which can be modulated effectively by the In composition in the QW. This electric field greatly increases the electron energy difference between the ground and the first excited states. The electron wave functions are also significantly localized in the QW due to the BEF. The intersubband optical absorption peak sensitively depends on the compositions of In in the well layer and Al in the barrier layers. The intersubband absorption coefficient can be remarkably modified by the electron concentration and the incident optical intensity. The group-M nitride semiconductor QWs are suitable candidate for infrared photodetectors and near-infrared laser amplifiers. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1836 / 1840

页数：5

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