A deep submicron CMOS process compatible suspending high-Q inductor

被引：20
|
作者：
Chen, CH
Fang, YK
Yang, CW
Tang, CS
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Lab, Tainan 70101, Taiwan
[2] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 11期
关键词：
air gap; inductors; pillars; RF CMOS; suspending;
D O I：
10.1109/55.962650
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel high-Q on-chip inductor structure called suspending inductor is developed to improve the characteristics of the conventional on-chip spiral inductor. The suspending inductor employs the air gap [1] and is supported by a set of novel metal pillars to suppress the capacitance from the metal layer to the substrate. The measured maximum quality factor of the suspending inductor is improved from 4.8 to 6.3 in comparison to the conventional spiral inductor. Furthermore, the frequency at maximum quality factor is raised from 1.5-2 GHz.
引用
收藏
页码：522 / 523
页数：2
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